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CuS is a member of metal chalcogenides (see our GaSe and GaTe products). It has ...

Niobium atoms are perfectly incorporated into ReS? matrix. These alloys are not ...

Our MoWS2 alloys with the chemical formula MoxW(1-x)S2 crystals perfectly crysta...

Rhenium atoms perfectly incorporated into MoS? matrix. These alloys are not phas...

Molybdenum atoms perfectly incorporated into ReS2 matrix. These alloys are not p...

Niobium atoms are perfectly incorporated into ReS? matrix. These alloys are not ...

Our newest class of material: Sb2xAs2(1-x)S3 comes in perfect 1:1:3 stoichiometr...

Synthetic MoS2 crystals have been I2 (iodine) intercalated to achieve p-type dop...

High purtiy WS2 crystals have been I2 (iodine) intercalated to achieve p-type do...

Environmentally stable anisotropic transition metal trichalcogenide material TaS...

Natural MoS2 is an indirect gap semiconductor (1.2 eV) but becomes highly lumine...

Natural MoS2 is an indirect gap semiconductor (1.2 eV) but becomes highly lumine...

Tungsten disulfide (2H-WS2) crystals are extremely rare in nature and are less t...

Years of growth optimization lead to our flawless n-type MoS2 crystals through A...

Zirconium disulfide (ZrS?) is an indirect gap layered semiconductor in the bulk ...

More than a decade of growth optimization in chemical vapor transport (CVT) as w...

Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsem...

Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsem...

ZrSiS as a theoretically predicted and experimentally proven Dirac semimetal, ex...

Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band ...