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ES660-P1 ESD靜電和閂鎖測試系統(tǒng)

1. Introduction

The ES660 series ESD and LU Test system is a state-of-the-art, multi-pin automated testing equipment designed to meet the rigorous demands of modern semiconductor testing. This versatile device is engineered to seamlessly support the Human Body Model (HBM), Machine Model (MM), and Latch-Up testing, offering a comprehensive solution for assessing the reliability and robustness of integrated circuits (ICs) and electronic components.

With the capability to support up to 1024 pins, the ES660-P1 is ideal for testing complex ICs and electronic components with a multitude of connections. Its high pin count capacity ensures that one can evaluate large-scale devices with precision and efficiency, reducing testing time and enhancing productivity.

For higher pin count, model ES660-P2 (up to 2048 pins) is on the development roadmap.

2. Features

Compatibility with Multiple Testing Methods & Standards
Highly Flexible Bias and Pin Count Configuration Capability
Automated Testing Efficiency
Advanced Control and Monitoring
Leakage & DC Sweep
Data Analysis

3. Applications

Semiconductor device ESD testing
HBM module meets ANSI/ESDA/JEDEC JS-001, MIL-STD-883E, AEC Q100-002
MM module meets ANSI/ESDA SP5.2
Latch-up meets JEDEC JESD78
Transient Latch-up pending for ANSI/ESD SP5.4.1

4. Specifications

ES660-P1 Base Unit

Parameters	ES660-P1	Unit	Comments
Touch Screen	5	inch
Dimensions	480 X 497.5 X 265	mm
Weight	28	kg	Full installation
ESD and LU Waveform	Optional Passive voltage and current probes
Supported Oscilloscope	Majority models from Keysight, Tektronix, LeCroy, Rigol,		Customizable
Supported SMU	Majority models from Keysight, Tektronix, LeCroy, Rigol,		Customizable
Supported PSU	Majority models from Keysight, Tektronix, LeCroy, Rigol.		Customizable

HBM Human Body Model Option

(ANSI/ESDA/JEDEC JS-001)

Parameters	ES660-P1-HBM8	ES660-P1-HBM10	Unit	Comments
Output voltage	±10 ~ 8000	±10 ~ 10000	V
Discharge RC Value	C: 100 pF ± 10%, R: 1.5k? ± 1%
Short Load Peak Current Ips	0.67 ± 10 % per kV		A
Short Load Rise Time trs	2 < trs < 10		ns
Short Load Decay Time tds	130 < tds < 170		ns
Short Load Ringing trs	< 15% of Ips
500 ? Load Peak Current Ipr	Ipr/Ips ≥ 63%
500 ? Load Rise Time trr	5 < trr < 25		ns
Max Pulse Rate /Pulse Module	10		P/S

MM Machine Model Option

(ANSI/ESD SP5.2)

Parameters	ES660-P1-MM2	ES660-P1-MM4	Unit	Comments
Output Voltage	±10 ~ 2000	±10 ~ 4000	V
Discharge RC Value	C: 200 pF, R: 0 ?
Short Load Peak Current Ip1	1.75±10% per 100V		A
Short Load Ip2	67% ~ 90% of Ip1		A
Short Load Pulse Period tpm	66 < tpm < 90		ns
500 ? Load Peak Current Ipr	0.85 – 1.2		A	@400V condition per standard
500 ? Load I100	0.23 – 0.4		A	@400V condition per standard

LU Latch-Up Option

(JEDEC JESD78F.01)

Parameters	ES660-P1-LU	Comments
Preconditioning Vectors	≥ 20 MHz, 256K Depth	External Setup
V/I 4-wire Kelvin Measurements	Y
DUT V/I Bus Supplies	3+1, 5+1, 7+1	Additional DC Sources Expansion Available
LU Waveform Capture	Y
Relay Matrix Max V DC (V)	200
SSR Matrix Max V DC (V)	100
Max I DC (A) Per Pin	2
Max I DC (A) Per DC Channel	15
Default LU Source Vmax (V)	>= 150	Limited to 1.2A
Default LU Source Imax (A)	>= 10	Limited to 6 V

TLU Transient Latch-Up Option

(ANSI/ESD SP5.4.1)

[Specifications pending finalization]
Scheduled Hardware-support for Latch-Up Transient Pulse Source:
ES622 (TLP/ VF-TLP), EOS-500 (EOS), LVS-500 (LVS), MM

5. Ordering Information

Line	Part # or Option #	Description
Base Unit Options
1.1	ES660-P1-BU	Relay Based HBM/MM/LU ATE System Base unit
1.2	ES660-P1-HBM8	Human Body Model capability up to 8 kV
1.3	ES660-P1-HBM10	Human Body Model capability up to 10 kV (Obsoleted)
1.4	ES660-P1-MM2	Machine Model capability up to 2 kV
1.5	ES660-P1-MM4	Machine Model capability up to 4 kV (Obsoleted)
1.6	ES660-P1-LU	Latch-up capability (Software)
1.7	ES660-P1-TLU	Transient Latch-up capability (Software – TLP. EOS)
1.8	ES660-TFM	Temperature Forcing Module
Relay Card with Bias Options
2.1	ES660-P1-R64B4	Expansion Relay Card for additional 64 Pin, 3+1 Bias
2.2	ES660-P1-R64B6	Expansion Relay Card for additional 64 Pin, 5+1 Bias
2.3	ES660-P1-R64B8	Expansion Relay Card for additional 64 Pin, 7+1 Bias
DC & Leakage & LU Pulse Source Options
3.1	ES660-PSMU2	Leakage\DC\LU Source: Dual Channels Pulsed SMU (210V/1.5A)
3.2	ES660-SMU1	Leakage\DC Source: Single Channel SMU (200V/1A)
3.3	ES660-PSU1	DC Source: Flex Channels PSU (32V/3A X 2 Ch + 6V/5A X 1 Ch, or 70V/3A X 1 Ch, or 32V/6A X 1 Ch + 6V/5A X 1 Ch)
3.4	ES660-PSU2	DC Source: 3-Channels PSU (60V/3A X 2 Ch, 5V/3A X 1 Ch, or 125V/3A X 1 Ch)
3.5	ES660-PSU3	DC Source: High Current PSU (20V/20A X 1 Ch)
3.6	ES660-PSU4	DC Source: High Current PSU (30V/25A X 1 Ch)
3.7	ES660-PSU5	DC Source: 3-Channels PSU (30V/6A X 2 Ch, 5V/3A X 1 Ch, or 60V/6A X 1 Ch)
3.8	ES660-PSU-MC1	Multi-Channels PSU: Main Frame, with OSC and logs
3.9	ES660-PSUC1	Multi-Channels PSU: Module 50V, 5A, 50W
3.10	ES660-PSUC2	Multi-Channels PSU: Module 50V, 10A, 100W
3.11	ES660-PSUC3	Multi-Channels PSU: Module 60V, 5A, 300W
3.12	ES660-PSUC4	Multi-Channels PSU: Module 100V, 1A, 100W
3.13	ES660-PSUC5	Multi-Channels PSU: Module 100V, 3A, 300W
3.14	ES660-PSUC6	Multi-Channels PSU: Module 150V, 2A, 300W
Test Socket Options
4.1	ES660-P1-DS512	DUT Socket PCB 512 Pin
4.2	ES660-P1-DS1024	DUT Socket PCB 1024 Pin
4.3	ES660-P1-DSC1	DUT Socket PCB Customized Pin Count
Oscilloscope Options
5.1	MISC-OSC1	Digital Oscilloscope (1 GHz, 5 GS/s, 4 Ch)
5.2	CT-T03-1p0	Broadband Current Probe, 1V/A, 2kHz – 2GHz ES660-P1 ESD靜電和閂鎖測試系統(tǒng)

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