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        1. 泰州巨納新能源有限公司
          中級會員 | 第3年

          13651969369

          當(dāng)前位置:泰州巨納新能源有限公司>>二維材料>>碲化物晶體>> NbTe2 crystals 二碲化鈮晶體

          NbTe2 crystals 二碲化鈮晶體

          參   考   價: 7909.2

          訂  貨  量: ≥1 片

          具體成交價以合同協(xié)議為準(zhǔn)

          產(chǎn)品型號

          品       牌2D Semiconductors

          廠商性質(zhì)生產(chǎn)商

          所  在  地泰州市

          更新時間:2024-06-03 15:31:47瀏覽次數(shù):759次

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          100% environmentally stable metallic NbTe2 crystals: In the bulk form, niobium ditelluride is metallic. Similar to molybdenum disulfide, it has layered structure (lamellar) with weak interlayer

          100% environmentally stable metallic NbTe2 crystals: In the bulk form, niobium ditelluride is metallic. Similar to molybdenum disulfide, it has layered structure (lamellar) with weak interlayer coupling. NbTe2 displays metallic and superconducting behavior. Undergoes superconducting transition around 1.1 K in bulk, but predicted to higher for thinner sheets. Unlike other sources, our NbTe2 crystals are grown by defect and impurity free flux zone technique (see the comparison between chemical vapor transport [CVT] below). Clean and defect free nature enabled researchers to observe clean superconductivity, phase transitions, and perform quantum transport measurements with confidence in the crystal.

          If your research needs atomically flat NbTe2 samples for scanning tunneling microscopy (STM) measurements please contact us.

          Properties of NbTe2 crystals by 2Dsemiconductors USA

          Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.


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