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        1. 泰州巨納新能源有限公司
          中級(jí)會(huì)員 | 第3年

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          當(dāng)前位置:泰州巨納新能源有限公司>>二維材料>>其他二維材料>> 2D SemiconductorsTiS3 nanosheets 三硫化鈦納米片

          TiS3 nanosheets 三硫化鈦納米片

          參   考   價(jià): 7030.4

          訂  貨  量: ≥20 片

          具體成交價(jià)以合同協(xié)議為準(zhǔn)

          產(chǎn)品型號(hào)2D Semiconductors

          品       牌BINKS/美國(guó)

          廠商性質(zhì)生產(chǎn)商

          所  在  地泰州市

          更新時(shí)間:2024-06-02 16:24:17瀏覽次數(shù):937次

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          供貨周期 現(xiàn)貨 規(guī)格 2D Semiconductors
          貨號(hào) 003 應(yīng)用領(lǐng)域 環(huán)保,能源
          主要用途 TiS3 nanosheets are different from our T Crystal size ~ 1 cm
          TiS3 nanosheets are different from our TiS3 crystals in that TiS3 nanosheets have been directly grown onto Ti thin foils using vapor liquid solid (VLS) growth technique. As shown in our product photos

           

          Advantages of TiS3 nanoribbons over TiS3 crystals

          Similar to TiS3, Ti/TiS3 nanosheets stacks can be mechanically exfoliated onto variety substrates
          VLS grown TiS3 are already really thin (~10) this mechanical exfoliation enables you to achieve monolayers much easily compared to bulk TiS3
          It is ideal for high update (battery, gas sensing / storage) applications
          TiS3 is a layered material like MoS2 and other layered systems. However, the crystal displays strong crystalline anisotropy which results in direction dependent properties like thermal conductivity, electronic mobility, and excitonic binding energies. Recent studies have proposed TiS3 as high carrier mobility 2D transistors [1], new IR material [1], as well as polarized emission material [2,3]. In a typical order, a large number of layered needle like sheets are contained in a capsule sealed under Argon environment.

          Crystals have been characterized by TEM, XPS, SIMS, Raman, and XRD and possess perfect 1:3 stoichiometry and defect density less than 1 defects / 10,000 unit cells.

          Crystal size ~ 1 cm

          Material characteristics

          High carrier mobility semiconductor
          2D anisotropic semiconductor
          2D Catalytic material
          Related literature

          [1] "Titanium Trisulfide Monolayer: Theoretical Prediction of a New Direct-Gap Semiconductor with High and Anisotropic Carrier Mobility"; Angew Chem Int Ed Engl. 2015 Jun 22;54(26):7572-6

          [2] Unusual lattice vibration characteristics in whiskers of the pseudo-one-dimensional titanium trisulfide TiS3; Nature Communications volume 7, Article number: 12952 (2016) doi:10.1038/ncomms12952 [Link]

          [3] Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties; Scientific Reports volume 6, Article number: 22214 (2016)

          [4] Angle resolved vibrational properties of anisotropic transition metal trichalcogenide nanosheets; Nanoscale, 2017,9, 4175-4182

           

          Publications from this product

          H. Yi et. al. The band structure of the quasi-one-dimensional layered semiconductor TiS3(001) Appl. Phys. Lett. 112, 052102 (2018)

           

           

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