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        1. 北京恒遠安諾科技有限公司
          中級會員 | 第11年

          13521412287

          當前位置:北京恒遠安諾科技有限公司>>電氣檢測儀器>>其他檢測儀器>> Model520C工業(yè)半導體測試儀

          工業(yè)半導體測試儀

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          產(chǎn)品型號Model520C

          品       牌

          廠商性質經(jīng)銷商

          所  在  地北京市

          更新時間:2024-06-20 20:04:53瀏覽次數(shù):640次

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          Model520C工業(yè)半導體測試儀
          The B+K Precision model 520C Transistor Tester is designed for in circuit and out of circuit transistor testing with special features for making additional tests on devices out of circuit. The instrument is designed for a minimum amount of control manipulation, making for rapid testing of most devices.
           
          -Determines good or bad transistors, FET's, SCR's, or diodes.
          -Patented limited energy pulse circuit permits in circuit testing in the presence of low shunt impedance's with complete safety for the device under test.
          -Easy to operate panel eliminates the need to refer to a reference or operating manual only three switches, no panel adjustments.
          -Six position test switch makes it unnecessary to know the device terminal identification.
          -A logarithmically scaled meter identifies leakage in both Silicon and Germanium devices.
          -Front Panel socket for out of circuit transistor testing
           

          技術參數(shù):

           
          520C
          510A
          IN-CIRCUIT TEST
          GOOD/BAD TEST
          PNP and NPN transistors
          FET’s, SCR’s
          IDENTIFIES
          NPN or PNP
          FET as N-channel or P-channel
          Silicone or germanium   transistors
          transistors in LO drive, base lead in HI drive all leads of SCR
          NPN or PNP
          FET as N-channel or P-channel
          FET-gate lead, all leads of
          OUT-OF-CIRCUIT TEST
          GOOD/BAD TEST
          PNP and NPN transistors
          FET’s, SCR’s
          PNP and NPN transistors
          FET’s
          IDENTIFIES
          NPN or PNP
          FET as N-channel or P-channel
          Silicone or germanium transistors
          NPN or PNP
          FET as N-channel or P-channel
          MEASURES
          Reverse leakage from 0.1mA to 9mA
          Does not apply
          AUTOMATIC INDICATORS
          AUDIBLE TONE
          GOOD
          Does not apply
          LED
          NPN or PNP, Ge or Si
          NPN or PNP, Ge or Si
          TEST SWITCH
          Base or Gate for good transist or FET’s
          Base or Gate for good transistor or FET’s
          METER SCALES
          Readable from 0.1μA to 9mA
          for Ice leakage, calibrated for silicon and germanium power and signal transistor leakage limits
          Does not apply
          APPLIED TEST CURRENTS
          BASE DRIVE*
          250mA (HI), 1mA (LO)
          COLLECTOR*
          125mA
          TEST REPETITION
          10Hz
          5Hz
          IN-CIRCUIT SHUNT LIMIT FOR VALID GOOD/BAD TEST
          RESISTANCE
          >10Ω (HI), 1.5kΩ (LO)
          CAPACITANCE
          <15mF (HI), 0.3mF (LO)
          <25mF (HI), 0.3μF (LO)
          GENERAL
          POWER REQUIREMENT
          9V Battery (Supplied) or optional AC adaptor
          6VDC from 4 “AA” batteries(not supplied)
          OPERATING TEMP
          32° to 104°F (0° to 40°C), <75% RH
          DIMENSIONS(HxD)
          7.5 x 4.0 x 2.0"(191 x 102 x 51 mm)
          WEIGHT
          1 lb. (450g)

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