二硒化鉬晶體 2H-MoSe2（Molybdenum Diselenide）-P型
晶體尺寸：~10毫米
電學特性：P型半導體
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = b = 0.329 nm, c = 1.289 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：99.995%

二硒化鉬晶體 2H-MoSe2(Molybdenum Diselenide)-P型
晶體尺寸：~10毫米
電學特性：P型半導體
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = b = 0.329 nm, c = 1.289 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：99.995%

 

X-ray diffraction on a MoSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8

 

Powder X-ray diffraction (XRD) of a single crystal MoSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

 

Stoichiometric analysis of a single crystal MoSe2 by Energy-dispersive X-ray spectroscopy (EDX).

 

Raman spectrum of a single crystal MoSe2. Measurement was performed with a 785 nm Raman system at room temperature.